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| RJK0304DPB Silicon N Channel Power MOS FET Power Switching REJ03G1352-0600 Rev.6.00 Apr 19, 2006 Features * * * * * High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.0 m typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain SSS 123 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg Note1 Ratings 30 +16/-12 35 140 35 14 19 50 2.5 150 -55 to +150 Unit V V A A A A mJ W C/W C C Rev.6.00 Apr 19, 2006 page 1 of 6 RJK0304DPB Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 4.0 5.5 60 2500 850 130 0.5 17 6.7 3.7 8.5 3.2 41 4.0 0.84 35 Max -- 0.1 1 2.5 4.8 7.2 -- -- -- -- -- -- -- -- -- -- -- -- 1.10 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = +16/-12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 17.5 A, VGS = 10 V Note4 ID = 17.5 Note4 A, VGS = 4.5 V ID = 17.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 4.5 V, ID = 35 A VGS = 10 V, ID = 17.5 A, VDD 10 V,RL = 0.57 , Rg = 4.7 IF = 35 A, VGS = 0 Note4 IF = 35 A, VGS = 0 diF/ dt = 100 A/ s Rev.6.00 Apr 19, 2006 page 2 of 6 RJK0304DPB Main Characteristics Power vs. Temperature Derating 80 1000 Maximum Safe Operation Area Pch (W) ID (A) 60 100 s Channel Dissipation Drain Current 40 10 20 1 limited by RDS(on) 0 50 100 150 200 Tc = 25C 0.1 1 shot Pulse 0.1 1 10 100 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 4.5 V 10 V Pulse Test 2.8 V 50 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 30 2.6 V 20 ID (A) Drain Current VGS = 2.4 V 40 40 30 Drain Current 20 25C Tc = 75C -25C 10 10 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 80 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (m) 100 Pulse Test Drain to Source Saturation Voltage VDS (on) (mV) Pulse Test 60 30 40 10 VGS = 4.5 V 3 10 V ID = 10 A 20 5A 2A 0 1 1 3 10 30 100 300 1000 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.6.00 Apr 19, 2006 page 3 of 6 RJK0304DPB Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 10000 3000 Ciss Static Drain to Source on State Resistance RDS (on) (m) Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 16 1000 300 100 30 10 0 VGS = 0 f = 1 MHz 10 20 12 ID = 2 A, 5 A, 10 A 8 VGS = 4.5 V 4 10 V 0 -25 0 25 50 2 A, 5 A, 10 A Coss Crss 75 100 125 150 30 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage VGS (V) 20 50 Dynamic Input Characteristics VDS (V) 50 VGS 16 VDD = 25 V 10 V VDS Reverse Drain Current IDR (A) ID = 35 A Pulse Test 10 V 40 5V 40 Drain to Source Voltage 30 12 Gate to Source Voltage 30 20 8 20 VGS = 0, -5 V 10 VDD = 25 V 10 V 0 20 40 60 80 4 10 0 0 100 0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nc) Source to Drain Voltage VSD (V) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 40 IAP = 14 A 32 VDD = 15 V duty < 0.1 % Rg 50 24 16 8 0 25 50 75 100 125 150 Channel Temperature Tch (C) Rev.6.00 Apr 19, 2006 page 4 of 6 RJK0304DPB Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 ch - c (t) = s (t) * ch - c ch - c = 2.5C/W, Tc = 25C PDM PW T 100 1m 10 m 100 m 1 10 D= PW T 0.05 0.03 0 .02 p 1 0.0 hot s 1 ul se 0.01 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform 1 2 L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP VDD VDS VDS Monitor L IAP Monitor EAR = Rg D. U. T ID Vin 15 V 50 0 VDD Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.6.00 Apr 19, 2006 page 5 of 6 RJK0304DPB Package Dimensions Package Name LFPAK JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Previous Code LFPAKV MASS[Typ.] 0.080g Unit: mm 4.9 5.3 Max 4.0 0.2 5 0.25 -0.03 +0.05 3.3 1.0 3.95 1 4 6.1 -0.3 +0.1 0 - 8 1.1 Max +0.03 0.07 -0.04 0.75 Max 1.27 0.10 0.40 0.06 0.25 M 0.6 -0.20 1.3 Max +0.25 0.20 -0.03 +0.05 (Ni/Pd/Au plating) Ordering Information Part Name RJK0304DPB-00-J0 Quantity 2500 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 Apr 19, 2006 page 6 of 6 4.2 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0 |
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